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1300um Thickness LED Sapphire Wafer 6 Inch High Temperature Resistance

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1300um Thickness LED Sapphire Wafer 6 Inch High Temperature Resistance

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Place of Origin : Chongqing, China

MOQ : 25pcs

Price : 55USD-90USD

Payment Terms : T/T, Western Union

Supply Ability : 10000PCS per month

Delivery Time : According to quantity

Packaging Details : Cassette

Material : Sapphire

Growing Method : KY

Use : LED, protective windows, optical products

OEM : Yes

Processing : According to drawing

Delivery port : Chongqing

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6 Inch Sapphire Wafer Sapphire Substrate For Led

Sapphire (Sapphire, also known as white sapphire, molecular formula Al2O3) single crystal is an excellent multifunctional material. It has high temperature resistance, good thermal conductivity, high hardness, infrared transmission and good chemical stability. Widely used in many fields of industry, national defense and scientific research (such as high-temperature infrared windows, etc.). At the same time, it is also a widely used single crystal substrate material, and it is the first choice for the blue, violet, and white light emitting diode (LED) and blue laser (LD) industries (the sapphire substrate needs to be epitaxial gallium nitride film first) , Is also an important superconducting film substrate.

Generally, the epitaxial layers of GaN-based materials and devices are mainly grown on sapphire substrates. Sapphire substrate has many advantages: firstly, the production technology of sapphire substrate is mature and the device quality is good; secondly, sapphire is very stable and can be used in the high-temperature growth process; finally, sapphire has high mechanical strength and is easy to handle And cleaning. Therefore, most processes generally use sapphire as the substrate.

Produc Requirements of 6 inch sapphire wafer

The product specified herein shall be manufactured from high quality optical grade sapphire crystals.

Parameter

Specification

Crystal Orientation C-axis (0001)miscut to M
Mis-Orientation Towards Laser Mark 0.2° off axis ± 0.05°Towards M axis
Mis Orientation Towards Primary Flat 0°± 0.15°
Diameter 150mm ± 0.20mm
Thickness 1300um±25um or 1000um ± 20um
Orientation Flat Location A-axis ± 0.3°
Major Flat Length 47.5mm± 1.0mm
Minor Optional
Surface Finish Epi Polished one side, Ra<0.3nm
Back Surface Ra ﹤1um
Edge Condition Edge defect not to exceed SEMI M3-91, Table 2 ;
TTV < 15 um
Bow < 10 um
Warp < 20um
Wafer ID Laser Marking-Standard Backside, Front side(optional)
Cleanliness No visual contamination
Packaging Substrates to be Packaged in a class 100 clean room environment, in vacuum packed cassettes of 25pcs.

1300um Thickness LED Sapphire Wafer 6 Inch High Temperature Resistance

FQA

1. Are you a trading company or factory?

We are a professional factory of sapphire products, also a trading company .

2.Can you do customized products?

Yes, we specialized in customized production or OEM work.

CAD,3D drawing are needed.

3.Could you provide samples?

Yes, we could provide samples with a charge, but if you place the order with a quality above 100pcs, the sample charge will be refunded.

4.What’s the delivery time?

It depends on the type of products and the quality.

For watch case, the regular time is around 5-8 weeks for 200pcs according to the difficulty of the processing.

5.How about the payment?

T/T payment is prefered.

6.How about the delivery?

Mostly by air, like DHL, Fedex.


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1300um LED Sapphire Wafer

      

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